Symbol Max p-channel Units
V
DS
V
V
GS
V
I
DM
T
J
, T
STG
°C
Symbol Device Typ Max Units
n-ch 50 62.5 °C/W
n-ch 90 110 °C/W
R
θJL
n-ch 43 53 °C/W
p-ch 45 62.5 °C/W
p-ch 80 110 °C/W
R
θJL
p-ch 40 50 °C/W
Thermal Characteristics: n-channel and p-channel
-55 to 150-55 to 150
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
t ≤ 10s
R
θJA
Maximum Junction-to-Ambient
A
30 -30
±20
Drain-Source Voltage
±20Gate-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter Max n-channel
W
6.6
5.6
30
2
1.44
-4.2
-5
2
1.44
A
Continuous Drain
Current
A
T
A
=25°C
I
D
T
A
=70°C
Pulsed Drain Current
B
R
θJA
Maximum Junction-to-Ambient
A
Steady-State
-20
T
A
=70°CPower Dissipation
T
A
=25°C
P
D
Steady-State
Junction and Storage Temperature Range
Maximum Junction-to-Lead
C
Steady-State
Maximum Junction-to-Ambient
A
t ≤ 10s
AON3601
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 6.6A (V
GS
=10V) -5A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 29mΩ (V
GS
=10V) < 52mΩ (V
GS
= -10V)
< 42mΩ (V
GS
=4.5V) < 72mΩ (V
GS
= -4.5V)
General Description
The AON3601 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be
used in power inverters, and other
applications.Standard Product AON3601 is Pb-
free (meets ROHS & Sony 259 specifications).
AON3601L is a Green Product ordering
option. AON3601 and AON3601L are
electrically identical.
G2
D2
S2
G1
D1
S1
n-channel p-channel
G1
S1
G2
S2
D1
D1
D2
D2
DFN 3x3
Top View Bottom View
Alpha & Omega Semiconductor, Ltd.