Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol Typ Max
30 40
61 75
R
θJC
4.5 6
Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Steady-State
°C/W
t ≤ 10s
R
θJA
°C/W
A
45
Junction and Storage Temperature Range °C-55 to 150
T
A
=70°C 1.0
Continuous Drain
Current R
θJA
=75°C/W
Maximum UnitsParameter
T
A
=25°C
T
A
=70°C
I
D
8
V
Power Dissipation
A
R
θJA
=75°C/W
T
A
=25°C
WP
DSM
1.6
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
6.3
Pulsed Drain Current
C
20
±12Gate-Source Voltage
Drain-Source Voltage
AON5800
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 8 A (V
GS
= 10V)
R
DS(ON)
< 16 mΩ (V
GS
= 10V)
R
DS(ON)
< 20 mΩ (V
GS
= 4.5V)
R
DS(ON)
< 21 mΩ (V
GS
= 4.0V)
R
DS(ON)
< 22 mΩ (V
GS
= 3.1V)
R
DS(ON)
< 27 mΩ (V
GS
= 2.5V)
R
DS(ON)
< 45 mΩ (V
GS
= 1.8V)
ESD Rating: 2000V HBM
General Description
The AON5800 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration. Standard Product AON5800 is Pb-
free (meets ROHS & Sony 259 specifications).
AON5800L is a Green Product ordering option.
AON5800 and AON5800L are electrically identical.
Top View Bottom View
G1
G2
S1
S2
D
Alpha & Omega Semiconductor, Ltd.