Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol Typ Max
15 20
41 50
R
θJC
2 2.4
4
W
T
A
=70°C 2.6
W
Junction and Storage Temperature Range
A
P
D
°C
63
31
-55 to 175
T
C
=100°C
I
D
Continuous Drain
Current
Maximum UnitsParameter
T
C
=25°C
T
C
=100°C
30
Maximum Junction-to-Ambient
A,D
Steady-State
55
39
120
Avalanche Current
C
30
Power Dissipation
A
T
A
=25°C
P
DSM
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12
Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Case
B
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A,D
t ≤ 10s
R
θJA
°C/W
A
Repetitive avalanche energy L=0.3mH
C
135 mJ
AOD494
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 55A (V
GS
= 10V)
R
DS(ON)
<11mΩ (V
GS
= 10V)
R
DS(ON)
< 13.5mΩ (V
GS
= 4.5V)
General Description
The AOD494 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge.This device
is suitable for use as a high side switch in SMPS and
general purpose applications. Standard Product
AOD494 is Pb-free (meets ROHS & Sony 259
specifications). AOD494L is a Green Product ordering
option. AOD494 and AOD494L are electrically
identical.
D
S
G
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.