A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 10 mA 10 V
BV
CER
I
C
= 10 mA R
BE
= 100 Ω 19 V
BV
CBO
I
C
= 5.0 mA 20 V
BV
EBO
I
C
= 1.0 mA 3.0 V
I
CES
V
CE
= 10 V 100 µA
H
FE
V
CE
= 5.0 V I
C
= 100 mA
I
C
= 300 mA
40
50

---
f
t
V
CE
= 5.0 V I
C
= 300 mA f = 100 MHz 1.0 2.0 GHz
C
cb
V
CB
= 5.0 V f = 1.0 MHz 4.2 Pf
C
C
V
CB
= 5.0 V f = 1.0 MHz 5.8 Pf

NPN SILICON HIGH FREQUENCY TRANSISTOR
BFT51F



DESCRIPTION:
The ASI BFT51 is Designed for
High Frequency Amplifier Applications.
MAXIMUM RATINGS
I
C
500 mA
V
CE
20 V
P
DISS
3.0 W @ T
C
= 25 °C
T
J
-65 °C to +175 °C
T
STG
-65 °C to +175 °C
θ
JC
20 K/W
PACKAGE STYLE TO- 126