A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 5.0 mA 10 V
BV
CER
I
C
= 1.0 mA R
BE
= 100 Ω 18 V
BV
CBO
I
C
= 1.0 mA 20 V
I
CEO
V
CE
= 5.0 V 1.0 mA
I
CES
V
CE
= 10 V 100 µA
I
EBO
V
EB
= 3.0 V 1.0 mA
h
FE
V
CE
= 5.0 V I
C
= 100 mA
I
C
= 300 mA
40 ---
f
t
V
CE
= 5.0 V I
C
= 300 mA f = 100 MHz 1.0 2.0 GHz
C
ob
V
CB
= 5.0 V f = 1.0 MHz 4.0 pF
NPN SILICON HIGH FREQUENCY TRANSISTOR
BFT51F.A
DESCRIPTION:
The ASI BFT51F.A is Designed for
High Frequency Amplifier Applications.
MAXIMUM RATINGS
I
C
500 mA
V
CE
20 V
P
DISS
3.0 W @ T
C
= 25
O
C
T
J
-65
O
C to +175
O
C
T
STG
-65
O
C to +175
O
C
θ
JC
50
O
C/W
PACKAGE STYLE TO- 126