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AT6021M

器件描述:SILICON ABRUPT JUNCTION TUNING VARACTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:16.62KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
B
I
R
= 10 µA 70 V
C
T
V
R
= 4.0 V f = 1.0 MHz 44.65 47.0 49.35 pF
∆C
T
C
T0
/C
T60
f = 1.0 MHz 7.4 ---
∆C
T
C
T8
/C
T60
f = 1.0 MHz 2.50 2.60 ---
Q V
R
= 4.0 V f = 50 MHz 600 ---
T
C
V
R
= 4.0 V 300 PPM/°C

SILICON ABRUPT JUNCTION TUNING VARACTOR
AT6021M
DESCRIPTION:
The ASI AT6021M is an Epitaxial
Silicon Abrupt Junction Microwave
Tuning Varactor. This Device is
Passivated With Silicon Dioxide Which
Results in Very Low Leakage Current.
The Capacitance Voltage Relationship
Closely Approximates Square Law
(n = 0.5).
MAXIMUM RATINGS
I
C
100 mA
V
CE
70 V
P
DISS
250 mW @ T
C
= 25
O
C
T
J
-65 to +150
O
C
T
STG
-65 to +150
O
C
θ
JC
500
O
C/W
PACKAGE STYLE 15