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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

AT6021

器件描述:SILICON ABRUPT JUNCTION TUNING VARACTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:20.97KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
B
I
R
= 10 µA70V
C
T
V
R
= 4.0 V f = 1.0 MHz 44.65 47.0 49.35 pF
∆C
T
C
T0
/C
T60
f = 1.0 MHz 7.4 ---
∆C
T
C
T8
/C
T60
f = 1.0 MHz 2.50 2.60 ---
Q V
R
= 4.0 V f = 50 MHz 600 ---
SILICON ABRUPT JUNCTION TUNING VARACTOR
AT6021
DESCRIPTION:
The AT6021 is an Epitaxial Silicon
Abrupt Junction Microwave Tuning
Varactor. This Device is Passivated
With Silicon Dioxide Which Results in
Very Low Leakage Current. The
Capacitance Voltage Relationship
Closely Approximates Square Law
(n = 0.5).
MAXIMUM RATINGS
I
C
100 mA
V
CE
70 V
P
DISS
250 mW @ T
C
= 25
O
C
T
J
-65 to +150
O
C
T
STG
-65 to +150
O
C
θ
JC
500
O
C/W
PACKAGE STYLE 15 (DO-7)