A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
B
I
R
= 10 µA 100 V
C
J
V
R
= 50 V f = 1.0 MHz
V
R
= 40 V
0.15 pF
C
P
f = 1.0 MHz 0.10 pF
L
S
1.0 nH
R
S
I
F
= 10 mA f = 500 MHz 1.5 Ohms
T
L
I
F
= 10 mA I
R
= 6.0 mA 100 nS
T
rr
I
F
= 20 mA I
R
= 100 mA @ 90% 20 nS
I-REGION 12 µM
SILICON PIN DIODE
AP1000C-11
DESCRIPTION:
The AP1000C-11 is a Passivated
Epitaxial Silicon PIN Diode Housed in
a Hermetically Sealed Glass Package.
This Device Iis Designed to Cover a
Wide Range of Control Applications
Such as RF Switching, Phase Shifting,
Modulation, Duplexing Limiting and
Pulse Forming.
MAXIMUM RATINGS
I 100 mA
V 100 V
P
DISS
250 mW @ T
A
= 25
O
C
T
J
-65
O
C to +175
O
C
T
STG
-65
O
C to +175
O
C
θ
JC
30
O
C/W
PACKAGE STYLE 01