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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

AT6017-10

器件描述:SILICON ABRUPT JUNCTION TUNING VARACTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:16.2KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.


CHARACTERISTICS TC = 25 °C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
B
I
R
= 10 µA 60 V
C
T
V
R
= 4.0 V f = 1.0 MHz 19.80 22.00 24.20 pF
∆C
T
C
T
= 0 V / C
T
= 8.0 V f = 1.0 MHz 7.2 RATIO
Q V
R
= 4.0 V f = 50 MHz 800 ---
T
C
V
R
= 4.0 V 300 Ppm/
O
C

SILICON ABRUPT JUNCTION TUNING VARACTOR
AT6017-10
DESCRIPTION:
The AT6017-10 is an Epitaxial Silicon
Abrupt Junction Microwave Tuning
Varactor. This Device is Passivated
With Silicon Dioxide Which Results in
Very Low Leakage Current. The
Capacitance Voltage Relationship
Closley Approximates Square Law
(n = 0.5).
MAXIMUM RATINGS
I
C
100 mA
V
CE
60 V
P
DISS
250 mW @ T
C
= 25 °C
T
J
-65 °C to +150 °C
T
STG
-65 °C to +150 °C
PACKAGE STYLE 10