A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIM UNITS
V
R
I
R
= 10 µA 120 V
V
F
I
F
= 1 mA 1.0 V
I
R
V
R
= 100 V 100 µA
C
T
V
R
= 4 V f = 1.0 MHz 36 38 40 pF
∆C
T
C
T0
/ C
T120
f = 1.0 MHz 10.0 ---
Q V
R
= 4 V f = 50 MHz 300 ---
R
S
I
F
= 10 mA f = 2400 MHz 0.9 Ω
SILICON ABRUPT VARACTOR DIODE
AT12020-21
DESCRIPTION:
The AT12020-21 is Designed for High
Performance RF and Microwave
Applications Requiring an Abrupt
Variable Capacitance Characteristic.
FEATURES INCLUDE:
• High Tuning Ratio, ∆C
T
= 10 MIN.
• High Quality Factor, Q = 300 MIN.
• Hermetic Package, C
P
= .20 pF
L
S
= .42 nH
MAXIMUM RATINGS
I
F
200 mA
V
R
120 V
P
DISS
1.75W @ T
C
25
O
C
T
J
-55
O
C to +150
O
C
T
STG
-55
O
C to +150
O
C
θ
JC
70
O
C/W
PACKAGE STYLE 21