A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/3

Specifications are subject to change without notice.
ELECTRICAL CHARACTERISTICS T
C = 25
O
C

SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
I
P


ASTD 1020 100 200 µA
ASTD 2030 200 300
ASTD 3040 300 400
ASTD 4050 400 500
ASTD 5060 500 600

V
F
I
F
= 3 mA ASTD 1020 135 mV
ASTD 2030 130
ASTD 3040 125
ASTD 4050 120
ASTD 5060 110

V
R
I
R
= 500 µA 400 mV
PLANAR TUNNEL (BACK) DIODE
ASTD SERIES
DESCRIPTION:
The ASTD Series of Tunnel Diodes
are Optimized for Operation as Back
Diode Detectors in Applications up
to 18 GHz.
FEATURES INCLUDE:
• Excellent Temperature Stability
• Fast Rise / Fall Times
• Available in Die Form
MAXIMUM RATINGS
I
R
10 mA
P
DISS
3 ERG spike
P
DISS
50 mW @ T
A
= +60
O
C
T
J
-65 to +110
O
C
T
STG
-65 to +125
O
C
PACKAGE STYLE 51