A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
BR
I
R
= 10 µA 300 V
C
J
V
R
= 50 V f = 1.0 MHz
V
R
= 40 V
0.2 pF
R
S
I
F
= 50 mA f = 100 MHz 0.6 Ohms
T
L
I
F
=10 mA I
R
= 6.0 mA 1000 nS
T
rr
I
F
=20 mA I
R
= 100 mA 100 nS
SILICON PIN DIODE CHIP
AP3000A-00
DESCRIPTION:
The AP3000C-11 is a Passivated
Epitaxial Silicon PIN Diode Housed in
a Hermetically Sealed Glass Package.
This Device is Designed to Cover a
Wide Range of Control Applications
Such as RF Switching,Phase Shifting,
Modulation, Duplexing Limiting and
Pulse Forming.
MAXIMUM RATINGS
I
F
100 mA
V
R
300 V
P
DISS
250 mW @ T
A
= 25
O
C
θ
JC
20
O
C/W
PACKAGE STYLE 01