ASIBLX15
器件描述:NPN SILICON RF POWER TRANSISTOR
文件大小:23.73KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 100 mA 55 V
BV
CBO
I
C
= 100 mA 110 V
BV
EBO
I
E
= 10 mA 4.0 V
h
FE
V
CE
= 6.0 V I
C
= 1.4 A 15 50 ---
P
g
IMD
3
η
C
V
CE
= 50 V I
cq
= 100 mA
P
out
= 150 W(PEP) f = 30 MHz
14
---
37
---
-37
45
---
-30
---
dB
dBc
%
C
ob
V
CB
= 50 V f = 1.0 MHz 220 pF
NPN SILICON RF POWER TRANSISTOR
ASI BLX15
DESCRIPTION:
The ASI BLX15 is a Common Emitter
Device Designed for High Linearity
Class A/AB HF Applications.
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
I
C
10 A
V
CB
110 V
P
DISS
233 W @ T
C
= 25
O
C
T
J
-55
O
C to +200
O
C
T
STG
-55
O
C to +200
O
C
θ
JC
0.75
O
C/W
PACKAGE STYLE .550 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE