A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 20 mA 50 V
BV
CES
I
C
= 20 mA 50 V
BV
EBO
I
E
= 10 mA 3.5 V
I
CES
V
CE
= 28 V 5.0 mA
h
FE
V
CE
= 5 V I
C
= 2.0 A 20 300 ---
P
G
η
C
V
CE
= 28 V P
OUT
= 35 W f = 1500 - 1600 MHz
8.0
45
9.0
50
dB
%
Z
CL
Z
IN
V
CE
= 28 V P
OUT
= 35 W f = 1500 MHz
3.0 + j0.5
4.0 + j15.0
Ohms
Z
CL
Z
IN
V
CE
= 28 V P
OUT
= 35 W f = 1600 MHz
1.8 + j1.0
5.5 + j16.2
Ohms
NPN RF POWER TRANSISTOR
ASAT35L
DESCRIPTION:
The ASAT35L is a Common Base
Transistor Designed for L-Band
Satcom Amplifier Applications.
FEATURES INCLUDE:
• Input/Output Matching Networks
• Gold Metallization
• Emitter Ballasting
MAXIMUM RATINGS
I
C
3.5 A
V
CBO
50 V
P
DISS
55 W @ T
C
= 25
O
C
T
J
-55
O
C to+200
O
C
T
STG
-55
O
C to+200
O
C
θ
JC
2.6
O
C/W
PACKAGE STYLE 400 2L FLG
1 = Collector 2 & 4 = Base 3 = Emitter