A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 5 mA 45 V
BVCER IC = 20 mA RBE = 10 Ω 45 V
BVEBO IE = 5 mA 3.5 V
ICBO VCE = 28 V 500 mA
hFE VCE = 5.0 V IC = 100 mA 15 150 ---
Ft VCE = 20 V IC = 100 mA 600 MHz
Cob VCB = 28 V f = 1.0 MHz 7.0 pF
PG
hC VCE = 28 V POUT = 3.0 W f = 400 MHz
12
50
13
60
dB
%
NPN SILICON RF POWER TRANSISTOR
C3-28
DESCRIPTION:
The C3-28 is Designed for Class A, B
and C Power Amplifier Applications Up
to 500 MHz.
FEATURES:
• PG = 13 dB Typ. at 3.0 W/400 MHz
• Emitter Ballasting for Ruggedness
• Omnigold™ Metallization System
MAXIMUM RATINGS
IC 1.0 A
VCB 45 V
PDISS 12 W @ TC = 25 OC
TJ -65 to +200 OC
TSTG -65 to +150 OC
qJC 15 OC/W
PACKAGE STYLE .280 4L STUD
ORDER CODE: ASI10810
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H .245 / 6.22 .255 / 6.48
DIM
1.010 / 25.65 1.055 / 26.80
I
J .217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D C
B
45°
A
#8-32 UNC
I
J
EE
B
C