A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
BR
I
R
= 10 µA 60 V
C
J
V
R
= 10 V f = 2 - 18 GHz 0.025 0.035 pF
R
S
I
F
= 10 mA f = 1.0 GHz 2.5 3.0 Ω
τ I
F
= 10 mA I
R
= 6.0 mA 40 nS
t
rr
I
F
= 10 mA I
R
= 6.0 mA 2.4 nS
Lead Pull 5 gm
SILICON BEAM LEAD PIN DIODE
ASB8000
PACKAGE STYLE BL1
DESCRIPTION:
The ASB8000 is a Silicon Beam Lead
PIN Diode Designed for High Speed
Switching Applications Up to 18 GHz.
FEATURES INCLUDE:
• Low Capacitance - 0.025 pF Typical
• Low Series Resistance - 2.5 Ω Typical
• High Beam Pulls - 5 Grams Minimum
MAXIMUM RATINGS
I
F
100 mA
V
R
60 V
P
DISS
250 mW @ T
A
= 25
O
C
T
J
-65
O
C to +175
O
C
T
STG
-65
O
C to +200
O
C
θ
JA
600
O
C/W