A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
B
I
R
= 10 µA 200 V
C
T
V = 50 V f = 1.0 MHz 1.5 pF
R
S
I
F
= 50 mA f = 100 MHz 0.6 Ohms
T
L
I
F
= 10 mA I
R
= 6.0 mA 3.0 µS
I-REGION I-REGION WIDTH 3.0 mS
SILICON PIN DIODE
AP1266
DESCRIPTION:
The AP1266 is a Passivated Epitaxial
Silicon PIN Diode in a Hermetically
Sealed Glass Package Designed for
Large Signal Switches.
MAXIMUM RATINGS
I 100 mA
V 200 V
P
DISS
1.0 W @ T
C
= 25
O
C
T
J
-65
O
C to +175
O
C
T
STG
-65
O
C to +175
O
C
T
SOLD
200
O
C
PACKAGE STYLE -11