A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 50 mA 65 V
BV
CES
I
C
= 50 mA 65 V
BV
EBO
I
E
= 15 mA 3.0 V
I
CES
V
CE
= 50 V 30 mA
h
FE
V
CE
= 5.0 V I
C
= 5.0 A 10 --- ---
P
G

η
C
P
OUT

V
CC
= 50 V P
IN
= 63 W f = 1235 to 1365 MHz
6.3
40
270
6.8
45
300
dB
%
W

NPN SILICON RF POWER TRANSISTOR
AM81214-300
DESCRIPTION:
The ASI AM81214-300 is Designed for
1200 – 1400 MHz, L-Band Applications.
FEATURES:
• Internal Input/Output Matching Network
• Common Base
• P
G
= 6.5 db at 325 W/1400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
18.75 A
V
CC
55 V
P
DISS
730 W @ T
C
= 25 °C
T
J
-65 °C to +250 °C
T
STG
-65 °C to +200 °C
θ
JC
0.24 °C/W
PACKAGE STYLE .400 2L FLG(A)



















MINIMUM
inches / mm
.100 / 2.54
.376 / 9.55
.050 / 1.27
.110 / 2.79
B
C
D
E
F
G
A
MAXIMUM
.120 / 3.05
.130 / 3.30
.396 / 10.06
inches / mm

.193 / 4.90
H
DIM
K
L
I
J
.490 / 12.45
.690 / 17.53
.003 / 0.08
.510 / 12.95
.710 / 18.03
.006 / 0.18
N
M
.118 / 3.00 .131 / 3.33
.135 / 3.43 .145 / 3.68
.072 / 1.83.052 / 1.32
P .230 / 5.84
G
C
N
2xR
4x .062 x 45°
I
E
P
M
F
L
H
J
K
2xB
D
.040 x 45°
A
.100 / 2.54
.395 / 10.03 .407 / 10.34
.890 / 22.61 .910 / 23.11