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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

AM1821-3

器件描述:NPN RF POWER TRANSISTOR
器件厂商:ASI [Advanced Semiconductor]
文件大小:21.28KB,共1页
Sponsor by e络盟
器件资料摘要:
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 °C

SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 2.0 mA 50 V
BV
CER
I
C
= 2.0 mA 50 V
I
CES
V
CE
= 2.0 mA 2.0 mA
BV
EBO
I
E
= 1.0 mA 3.5 V
h
FE
V
CE
= 5 V I
C
= 200 mA 10 ---
P
G
η
C

V
CC
= 24 V P
OUT
= 3.0 W f = 1800 to 2100 MHz
Pulse Width = 300 µS Duty Cycle = 10%
7.8
50


dB
%

NPN RF POWER TRANSISTOR
AM1821-3
DESCRIPTION:
The ASI AM1821-3 is a Common
Base Device Designed for Pulsed S-
Band Radar Amplifier Applications.

FEATURES INCLUDE:
• Input/Output Matching
• Gold Metallization
• Emitter Ballasting
MAXIMUM RATINGS
I
C
0.9 A
V
CBO
50 V
P
DISS
11.6 W @ T
C
= 25 °C
T
J
-55 °C to+200 °C
T
STG
-55 °C to+200 °C
θ
JC
15 °C/W
PACKAGE STYLE 400 2L FLG (E)

1 = COLLECTOR 2 & 4 = BASE
3 = EMITTER