A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.


CHARACTERISTICS T
C
= 25 °C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 8.0 mA 45 V
BV
EBO
I
E
= 8.0 mA 3.0 V
I
CBO
V
CE
= 28 V 2.0 mA
h
FE
V
CE
= 5.0 V I
C
= 1.6 A 15 150 ---
C
ob
V
CB
= 28 V f = 1.0 MHz 80 pF
P
G

η
C

V
CC
= 28 V P
OUT
= 25 W f = 1620 – 1660 MHz
P
IN
= 3.5 W
8.5
55

58
dB
%

NPN SILICON RF POWER TRANSISTOR
AM1517-025M
DESCRIPTION:
The ASI 1517-025M is Designed for
Satellite communications applications
in the 1620 to 1660 MHz range.

FEATURES:
• Internal Input/Output Matching Networks
• P
G
= 8.5 dB at 25 W/1.5 – 1.7 GHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I
C
2.5 A
V
CC
30 V
P
DISS
45 W @ T
C
≤ 100 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
θ
JC
3.3 °C/W
PACKAGE STYLE .400 2NL FLG


















COMMON BASE
MINIMUM
inches / mm
.100 / 2.54
.110 / 2.79
.376 / 9.55
.395 / 10.03
B
C
D
E
F
G
A
MAXIMUM
.396 / 10.06
.407 / 10.34
.130 / 3.30
inches / mm

.450 / 11.43
H
DIM
K
L
I
J
.640 / 16.26
.890 / 22.61
.004 / 0.10
.660 / 16.76
.910 / 23.11
.007 / 0.18
H
F
C
E
N
ØD
M
G
4x .062 x 45°
P
L
K
I
J
2X B
.025 x 45°
A
N
M
.118 / 3.00 .131 / 3.33
.020 / 0.51 .030 / 0.76
.193 / 4.90
.125 / 3.18
.395 / 10.03 .415 / 10.54
.072 / 1.83.052 / 1.32
P .230 / 5.84