A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
I
CBO
V
CB
= 8.0 V 200 nA
I
EBO
V
EB
= 1.0 V 1.0 µA
h
FE
V
CE
= 8.0 V I
C
= 7.0 mA 50 250 ---
C
OB
V
CB
= 10 V 0.2 0.7 pF
f
t
V
CE
= 8.0 V I
C
= 20 mA f = 1.0 GHz 8.0 9.0 GHz
S21
2
V
CE
= 8.0 V I
C
= 20 mA f = 2.0 GHz 9 11 dB
NF
GA
V
CE
= 8 V I
C
= 7.0 mA f = 2.0 GHz
11
1.6
12
2.3
dB
NPN SILICON LOW NOISE RF TRANSISTOR
ALN68135
DESCRIPTION:
The ALN68135 is a Common Emitter
Device Designed for Low Noise Class A
Amplifier Applications up to 4.0 GHz.
FEATURES INCLUDE:
• N
F
= 1.6 dB Typical @ 2 GHz
•S21
2
= 12 dB Typical @ 2 GHz
• Replacement for NE68135
MAXIMUM RATINGS
I
C
40 mA
V
CBO
20 V
V
CEO
12 V
V
EBO
1.5 V
P
DISS
290 mW @ T
A
≤ 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
θ
JC
600
O
C/W
PACKAGE STYLE SS35
1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE