5082-3306
器件描述：FAST SWITCHING SILICON PIN DIODE
器件厂商：ASI [Advanced Semiconductor]
文件大小：16.12KB，共1页
Sponsor by e络盟器件资料摘要：
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
B
I
R
= 10 µA 70 V
C
T
V
R
= 20 V f = 1.0 MHz 0.45 pF
R
S
I
F
= 20 mA f = 100 MHz 1.0 Ω
t
rr
I
F
= 20 mA V
R
= 10 V 10 nS
FAST SWITCHING SILICON PIN DIODE
5082-3306
DESCRIPTION:
The ASI 5082-3306 is a passivated
silicon PIN diode of mesa construction.
Designed for controlling and
processing microwave signals up to Ku
band.
FEATURES:
• 50 W Peak Pulse Power
• Switching time < 5 nS
• Heat Sink Cathode
MAXIMUM RATINGS
P
DISS
0.25 W @ T
C
= 25 °C
T
J
-65 °C to +150 °C
T
STG
-65 °C to +150 °C
PACKAGE STYLE 51
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
B
I
R
= 10 µA 70 V
C
T
V
R
= 20 V f = 1.0 MHz 0.45 pF
R
S
I
F
= 20 mA f = 100 MHz 1.0 Ω
t
rr
I
F
= 20 mA V
R
= 10 V 10 nS
FAST SWITCHING SILICON PIN DIODE
5082-3306
DESCRIPTION:
The ASI 5082-3306 is a passivated
silicon PIN diode of mesa construction.
Designed for controlling and
processing microwave signals up to Ku
band.
FEATURES:
• 50 W Peak Pulse Power
• Switching time < 5 nS
• Heat Sink Cathode
MAXIMUM RATINGS
P
DISS
0.25 W @ T
C
= 25 °C
T
J
-65 °C to +150 °C
T
STG
-65 °C to +150 °C
PACKAGE STYLE 51