GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2225-4L
3.5 Watts, 24 Volts, Class C
Microwave 2200-2500 MHz
GENERAL DESCRIPTION
The 2225-4L is a COMMON BASE transistor capable of providing 3.5 Watts,
Class C output power over the band 2200-2500 MHz. The transistor includes
input prematching for full broadband capability. Gold metalization and
diffused ballasting are used to provide high reliability and supreme
ruggedness. The transistor uses a fully hermetic High Temperature Solder
Sealed package.
CASE OUTLINE
55LV, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 10 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 40 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 0.6 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o

ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 2200-2500 MHz
Vcc = 24 Volts
Pout =3.5Watts
3.5
8.5
40
0.5
10:1
Watts
Watts
dB
%
BVces
BVebo
Hfe
Cob
θjc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance
Thermal Resistance
Ic = 10 mA
Ie = 5 mA
Vce = 5V, Ic = 200 mA
Vcb = 24 F = 1 MHz
Tc = 25 C
o
40
3.5
20
7
120
17.0
Volts
Volts
pF
C/W
o
Initial Issue July, 1994