2931-150
器件描述：150 Watts, 38 Volts, 50us, 4% Radar 2900-3100 MHz
器件厂商：ADPOW [Advanced Power Technology]
文件大小：95.66KB，共4页
Sponsor by e络盟器件资料摘要：
2931-150R3
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
2931-150
150 Watts, 38 Volts, 50µs, 4%
Radar 2900-3100 MHz
Preliminary
GENERAL DESCRIPTION
The 2931-150 is an internally matched, COMMON BASE bipolar transistor
capable of providing 150 Watts of pulsed RF output power at 50µs pulse width,
4% duty factor across the 2900 to 3100 MHz band. The transistor prematch
and test fixture has been optimized through the use of Pulsed Automated
Load Pull. This hermetic ceramic sealed transistor is specifically designed for
S-band radar applications. It utilizes gold metallization and emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C1 500 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 65 V
Emitter to Base Voltage (BVebo) 3.0 V
Collector Current (Ic) 15.0 A
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Output F=2900-3100 MHz 150 W
Pin Power Input Vcc = 38 Volts 21.7 W
Pg Power Gain Pulse Width = 50 µs 8.3 8.7 dB
ηc Collector Efficiency Duty Factor = 4 % 45 50 %
Rl Return Loss 7 dB
Pd Pulse Droop 0.6 dB
tr Rise Time 150 nS
VSWRl Load Mismatch Tolerance1 F = 3100 MHz, Po = 150W 2:1
FUNCTIONAL CHARACTERISTICS @ 25 C
BVebo Emitter to Base Breakdown Ie = 30 mA 3.0 V
BVces Collector to Emitter Breakdown Ic = 120 mA 65 V
hFE DC – Current Gain Vce = 5V, Ic = 600 mA 18 60
θjc1 Thermal Resistance 0.35 °C/W
NOTE: 1. At rated output power and pulse conditions
Issue 2, April 2005
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
2931-150
150 Watts, 38 Volts, 50µs, 4%
Radar 2900-3100 MHz
Preliminary
GENERAL DESCRIPTION
The 2931-150 is an internally matched, COMMON BASE bipolar transistor
capable of providing 150 Watts of pulsed RF output power at 50µs pulse width,
4% duty factor across the 2900 to 3100 MHz band. The transistor prematch
and test fixture has been optimized through the use of Pulsed Automated
Load Pull. This hermetic ceramic sealed transistor is specifically designed for
S-band radar applications. It utilizes gold metallization and emitter ballasting to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C1 500 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 65 V
Emitter to Base Voltage (BVebo) 3.0 V
Collector Current (Ic) 15.0 A
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Output F=2900-3100 MHz 150 W
Pin Power Input Vcc = 38 Volts 21.7 W
Pg Power Gain Pulse Width = 50 µs 8.3 8.7 dB
ηc Collector Efficiency Duty Factor = 4 % 45 50 %
Rl Return Loss 7 dB
Pd Pulse Droop 0.6 dB
tr Rise Time 150 nS
VSWRl Load Mismatch Tolerance1 F = 3100 MHz, Po = 150W 2:1
FUNCTIONAL CHARACTERISTICS @ 25 C
BVebo Emitter to Base Breakdown Ie = 30 mA 3.0 V
BVces Collector to Emitter Breakdown Ic = 120 mA 65 V
hFE DC – Current Gain Vce = 5V, Ic = 600 mA 18 60
θjc1 Thermal Resistance 0.35 °C/W
NOTE: 1. At rated output power and pulse conditions
Issue 2, April 2005