GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2010
10 Watt - 28 Volts, Class C
Microwave 2000 MHz
GENERAL DESCRIPTION
The 2010 is a COMMON BASE transistor capable of providing 10 Watts
Class C, RF output power at 2000 MHz. Gold metalization and diffused
ballasting are used to provide high reliability and supreme ruggedness. The
transistor uses a fully hermetic High Temperature Solder Sealed package.
CASE OUTLINE
55BT-1, Style
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 30 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 2.0 A
Maximum Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o

ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 2 GHz
Vcb = 28 Volts
Po= 10 Watts
As Above
F = 2 GHz, Po = 10 W
10
7.0
8.0
40
2
20:1
Watt
Watt
dB
%
BVces
BVcbo
BVebo
Icbo
h
FE
Cob
θjc
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Collector to Base Current
Current Gain
Output Capacitance
Thermal Resistance
Ic = 20 mA
Ic = 4 mA
Ie = 4 mA
Vcb = 28 Volts
Vce = 5 V, Ic = 400 mA
F = 1 MHz, Vcb = 28 V
50
45
3.5
20

4.0

6.0
Volts
Volts
Volts
mA
pF
C/W
o
Issue August 1996