2729-125
125 Watts, 36 Volts, 100µs, 10%
Radar 2700-2900 MHz

GENERAL DESCRIPTION
The 2729-125 is an internally matched, COMMON BASE bipolar transistor
capable of providing 125 Watts of pulsed RF output power at 100µs pulse
width, 10% duty factor across the 2700 to 2900 MHz band. The transistor
prematch and test fixture has been optimized through the use of Pulsed
Automated Load Pull. This hermetically solder-sealed transistor is specifically
designed for S-band radar applications. It utilizes gold metallization and emitter
ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55KS-1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C
1
350 W
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
) 65 V
Emitter to Base Voltage (BV
ebo
) 3.0 V
Collector Current (I
c
) 15 A
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature +200 °C



ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
P
out
Power Output

F=2700-2900 MHz 125 W
P
in
Power Input

V
cc
= 36 Volts 15.7 W
P
g
Power Gain

Pulse Width = 100 µs 9.0 9.5 dB
η
c
Collector Efficiency Duty Factor = 10% 45 55 %
VSWR Load Mismatch Tolerance
1
F = 2900 MHz, P
o
= 125W 2:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
Emitter to Base Breakdown Ie = 30 mA 3.0 V
BV
ces
Collector to Emitter Breakdown Ic = 120 mA 56 65 V
h
FE
DC – Current Gain Vce = 5V, Ic = 600 mA 18 50
θjc
1
Thermal Resistance 0.5 °C/W
NOTE: 1. At rated output power and pulse conditions

Issue April 2003
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.