1N53
器件资料摘要：
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIM UNITS
N
F
F = 9375 MHz P
lo
= 1.0 mW NF
Iif
= 1.5 dB
R
L
= 100 Ω I
F
= 30 MHz
13.1 dB
V
SWR
1.6
Z
IF
R
L
= 100 Ω f = 1000 Hz 400 800 Ω
Test
Frequency
F = 9375 MHz P
lo
= 1.0 mW NF
Iif
= 1.5 dB
R
L
= 100 Ω I
F
= 30 MHz
35 GHz
SILICON MIXER DIODE
1N53
DESCRIPTION:
The ASI 1N53 is a Silicon Mixer
Diode Designed for low noise
performance in
Ka-Band Applications Operating up to
35 GHz.
FEATURES:
• Low Noise Fugure
• Wider Bandwith than cartridge
diodes inX Band
PACKAGE STYLE DO- 36
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C
NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIM UNITS
N
F
F = 9375 MHz P
lo
= 1.0 mW NF
Iif
= 1.5 dB
R
L
= 100 Ω I
F
= 30 MHz
13.1 dB
V
SWR
1.6
Z
IF
R
L
= 100 Ω f = 1000 Hz 400 800 Ω
Test
Frequency
F = 9375 MHz P
lo
= 1.0 mW NF
Iif
= 1.5 dB
R
L
= 100 Ω I
F
= 30 MHz
35 GHz
SILICON MIXER DIODE
1N53
DESCRIPTION:
The ASI 1N53 is a Silicon Mixer
Diode Designed for low noise
performance in
Ka-Band Applications Operating up to
35 GHz.
FEATURES:
• Low Noise Fugure
• Wider Bandwith than cartridge
diodes inX Band
PACKAGE STYLE DO- 36