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BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
23A017
1.7 Watts, 20 Volts, Class A
Linear to 2300 MHz
GENERAL DESCRIPTION
The 23A017 is a COMMON EMITTER transistor capable of providing 1.7
Watts of Class A, RF output power to 2300 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.
CASE OUTLINE
55BT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 6.0 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 800 mA
Maximum Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o

ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
Ft
VSWR
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
F = 2.3 GHz
Ic = 280 mA
Vcc = 20 Volts
Vce = 20V, Ic =280 mA
1.7
6.25
3.4
2.2

7.6
3.7
.38
9:1
Watts
Watts
dB
GHz
BVebo
BVces
BVceo
h
FE
Cob
θjc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Capacitance
Thermal Resistance
Ie = 2 mA
Ic = 20 mA
Ic = 20 mA
Vce = 5 V, Ic = 200 mA
Vcb = 28V, f = 1 MHz
3.5
50
22
20
4.8
14 16
Volts
Volts
Volts
pF
C/W
o
Initial Issue June, 1994