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BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
23A005
0.5 Watts, 20 Volts, Class A
Linear to 2300 MHz
GENERAL DESCRIPTION
The 23A005 is a COMMON EMITTER transistor capable of providing 0.5
Watt of Class A, RF output power to 2300 MHz. This transistor is specifically
designed for general Class A amplifier applications. It utilizes gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness. The transistor uses a fully hermetic High Temperature Solder
Sealed package.
CASE OUTLINE
55BT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 3.0 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 400 mA
Maximum Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o

ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
Ft
VSWR
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
F = 2.3 GHz
Ic = 120 mA
Vcc = 20 Volts
Vce = 20V, Ic =120 mA
.5
8.5
4.0
0.7

9.5
4.3
.07
30:1
Watts
Watts
dB
GHz
BVebo
BVces
BVceo
h
FE
Cob
θjc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Capacitance
Thermal Resistance
Ie = 1 mA
Ic = 10 mA
Ic = 10 mA
Vce = 5 V, Ic = 100 mA
Vcb = 28V, f = 1 MHz
3.5
50
22
20
2.4
32
3.0
35
Volts
Volts
Volts
pF
C/W
o
Issue August 1996