GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2223-1.7
1.7 Watts - 24 Volts, Class C
Microwave 2200 - 2300 MHz
GENERAL DESCRIPTION
The 2223-1.7 is a COMMON BASE transistor capable of providing 1.7 Watts
of Class C, RF output power over the band 2200 - 2300 MHz. This transistor
is designed for Microwave Broadband Class C amplifier applications. It
includes input prematching and utilizes Gold metalization and diffused
ballasting to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder sealed package.
CASE OUTLINE
55LV, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 7 Watts
o
Maximum Voltage and Current
BVces Collector to Emiter Voltage 45 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current .25 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o

ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST MIN TYP MAX UNITS
CONDITIONS
Pout
Pin Power Input Vcc = 24 Volts .25 Watts
Pg
ηc
VSWR
Power Output F =2.2 - 2.3 GHz 1.7 Watts
Power Gain 8.3 dB
Efficiency 35 %
Load Mismatch Tolerance 10:1
BVces
BVebo Emitter to Base Breakdown Ie = 2 mA 3.5 Volts
Hfe
Cob
θjc
Collector to Base Breakdown Ic = 10 mA 40 Volts
Current Gain Vce = 5 V, Ic = 160mA 10 100
Output Capacitance Vcb = 28V, 1MHz pF
Thermal Resistance Tc = 25 C 24 C/W
oo
Issue A June 1997