GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
10AM20
20 Watts, 20 Volts, Class A
Linear to 1000 MHz
GENERAL DESCRIPTION
The 10AM20 is a COMMON EMITTER transistor capable of providing 20
Watts of Class A, RF output power to 1000 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness. The transistor uses a fully hermetic High Temperature
Solder Sealed package.
CASE OUTLINE
55AT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 63 Watts
o

Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 5.5 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o

SEE NOTE BELOW
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
Ft
VSWR
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
F = 1.0 GHz
Ic = 2.8 A
Vcc = 20 Volts
Vce = 22 V, Ic = 2.8 A
20
6.5
24
3.0
7.0
4.5
3:1
Watts
Watts
dB
GHz
BVebo
BVces
BVceo
H
FE
Cob
θjc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Output Capacitance
Thermal Resistance
Ie = 15 mA
Ic = 180 mA
Ic = 180 mA
Vce = 5 V, Ic = 1.0 A
Vcb = 28V, f =1.0 MHz
3.5
50
24
20 40
1.2 1.5
Volts
Volts
Volts
pF
C/W
o
Case Outline Note: During 1995 Ghz will be converting the 55AT style flange to the version using a slot in the
mounting area, refer to 55AW.
Issue February 1996