GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
0912-45
45 Watts, 50 Volts, Pulsed
Avionics 960 - 1215 MHz
GENERAL DESCRIPTION
The 0912-45 is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 960-1215 MHz. The device has gold
thin-film metallization for proven highest MTTF. The transistor includes
input prematch for broadband capacity. Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55CX, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 225 Watts
o2
Maximum Voltage and Current
BVces Collector to Base Voltage 60 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 4.5 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
o
Operating Junction Temperature + 200 C
o

ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
2
η
c
2
VSWR
2
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 960-1215 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1%
F = 1090 MHz
45
8.0 9.0
45
7.0
10:1
Watts
Watts
dB
%
BVebo
BVces
Cob
h
FE
θjc
2
Emitter to Base Breakdown
Collector to Emitter Breakdown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
Ie = 25 mA
Ic = 75 mA
Vcb = 50V
Ic = 300 mA, Vce = 5 V
4.0
60
10
20
0.8
Volts
Volts
pF
C/W
o
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Initial Issue June, 1994