0910-300M
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324







GENERAL DESCRIPTION
The 0910-300M is an internally matched, COMMON BASE transistor capable
of providing 300 Watts of pulsed RF output power at 150 µs pulse width, , 5%
duty factor across the band 900 to 1000 MHz. This hermetically solder-sealed
transistor is specifically designed for P-Band radar applications. It utilizes gold
metallization and diffused emitter ballasting to provide high reliability and
supreme ruggedness.

CASE OUTLINE
55KT, STYLE 1



ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C 600 Watts

Maximum Voltage and Current
BVces Collector to Emitter Voltage 65 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 20 Amps

Maximum Temperatures
Storage Temperature - 65 to + 200
o
C
Operating Junction Temperature + 200
o
C







ELECTRICAL CHARACTERISTICS @ 25
O
C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Pout
Pg
ηc
Rl
Droop
VSWR
1
VSWRs

Power Out
Power Gain
Collector Efficiency
Input Return loss
Load Mismatch Tolerance
Droop
Load Mismatch - Stability

Freq = 890 – 1000 MHz
Vcc = 50 Volts
Pin = 33 Watts
Pulse Width = 150µs
Duty Factor = 5%

300
9.6
40
-9



45

425



0.5
3:1
2:1

Watts
dB
%
dB
dB
Note 1: Pulse condition of 150µsec, 10%.


Bvces
Ices
θjc
1


Collector to Emitter Breakdown
Collector to Emitter Leakage
Thermal Resistance

Ic = 80 mA
Vce = 50 Volts
Rated Pulse Condition

65










15
0.29

Volts
mA
o
C/W



Issue Nov 2005




0910– 300M
300 Watts - 50 Volts, 150µs, 5%
Radar 890 - 1000 MHz