APTM120U10SA
A
P
T
M
120U
10
S
A
R
e
v 0 S
e
pt
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m
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r
, 2005
APT website – http://www.advancedpower.com 1 – 6








D
Q1
G
S
CR1SK






DS
G
SK




Absolute maximum ratings



These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 1200 V
T
c
= 25°C 116
I
D
Continuous Drain Current
T
c
= 80°C 86
I
DM
Pulsed Drain current 464
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 120
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 3290 W
I
AR
Avalanche current (repetitive and non repetitive) 24 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3200
mJ
V
DSS
= 1200V
R
DSon
= 100mΩ typ @ Tj = 25°C
I
D
= 116A @ Tc = 25°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features
• Power MOS 7
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for MOSFET improved thermal
performance

Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Single switch
Series & parallel diodes
MOSFET Power Module