APTM120TDU57P
A
P
T
M
120T
D
U
57P
–
R
e
v 0 S
e
pt
e
m
be
r
, 2004
APT website – http://www.advancedpower.com 1 – 6







S3/ S4
G5
D5
S5
S5/ S6
S1
D1
G1
S1/S2
S3
D3
G3
D6
S6
G6
D2
G2
S2
D4
S4
G4








G5
G6
S6
S5
G3
D 3 D 5
S3/S4
G4
S4
D 6D 4
S3
D 1
S5/S6
S2
G2
S1
G1
D 2
S1/S2

Absolute maximum ratings


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 1200 V
T
c
= 25°C 17
I
D
Continuous Drain Current
T
c
= 80°C 13
I
DM
Pulsed Drain current 68
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 570
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 390 W
I
AR
Avalanche current (repetitive and non repetitive) 22 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3000
mJ
V
DSS
= 1200V
R
DSon
= 570mΩ max @ Tj = 25°C
I
D
= 17A @ Tc = 25°C
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies

Features
• Power MOS 7
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Triple dual common source
MOSFET Power Module