APTM120DU29T
AP
T
M
1
2
0
DU2
9
T
–
R
e
v 0 J
u
l
y, 2004
APT website – http://www.advancedpower.com 1 – 6







S
Q1
Q2
D2
S2
S1
G1 G2
D1
NTC1
NTC2






D2
NTC2
D2
S1
D1
NTC1
S2
G2
S2
G2
S
G1



Absolute maximum ratings




These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 1200 V
T
c
= 25°C 34
I
D
Continuous Drain Current
T
c
= 80°C 25
I
DM
Pulsed Drain current 136
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 290
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 780 W
I
AR
Avalanche current (repetitive and non repetitive) 22 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3000
mJ
V
DSS
= 1200V
R
DSon
= 290mΩ max @ Tj = 25°C
I
D
= 34A @ Tc = 25°C
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies

Features
• Power MOS 7
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile

Dual Common Source
MOSFET Power Module