APTM120A20D
A
P
T
M
120U
20D

R
e
v 0 J
u
l
y, 2004
APT website – http://www.advancedpower.com 1 – 6










OUTVBUS
S1
G1
0/VBUS
G2
S2



Absolute maximum ratings



These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 1200 V
T
c
= 25°C 50
I
D
Continuous Drain Current
T
c
= 80°C 37
I
DM
Pulsed Drain current 200
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 200
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 1250 W
I
AR
Avalanche current (repetitive and non repetitive) 12 A
E
AR
Repetitive Avalanche Energy 30
E
AS
Single Pulse Avalanche Energy 1300
mJ
V
DSS
= 1200V
R
DSon
= 200mΩ max @ Tj = 25°C
I
D
= 50A @ Tc = 25°C
Application

• Zero Current Switching resonant mode

Features

• Power MOS 7
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration

Benefits

• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Phase leg
with Series diodes
MOSFET Power Module