APTM10UM01FA
A
P
T
M
10U
M
01F
A
–

R
e
v 0 M
a
y, 2005
APT website – http://www.advancedpower.com 1 - 6







D
G
DK
S
SK




DS
DK
G
SK



Absolute maximum ratings


* Specification of MOSFET device but output current must be limited to 500A to not exceed a delta of temperature
greater than 100°C for the connectors.


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 100 V
T
c
= 25°C 860 *
I
D
Continuous Drain Current
T
c
= 80°C 640 *
I
DM
Pulsed Drain current 2200
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 1.6
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 2500 W
I
AR
Avalanche current (repetitive and non repetitive) 100 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3000
mJ
V
DSS
= 100V
R
DSon
= 1.5mΩ typ @ Tj = 25°C
I
D
= 860A* @ Tc = 25°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features
• Power MOS V
®
FREDFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Fast intrinsic diode
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Single Switch
MOSFET Power Module