APTM10HM05F
A
P
T
M
10H
M
05F
– R
e
v 0 M
a
y, 2005
APT website – http://www.advancedpower.com 1 - 6







S4
G4
S3
Q3
G3G1
Q1
Q4
0/ VBUS
VBUS
OU
T
2
OU
T
1
G2
Q2
S2
S1


S4
G4
G2
S2
VBUS 0/VBUS
S1
G1
S3
OUT1
OUT2
G3


Absolute maximum ratings


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 100 V
T
c
= 25°C 278
I
D
Continuous Drain Current
T
c
= 80°C 207
I
DM
Pulsed Drain current 1100
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 5
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 780 W
I
AR
Avalanche current (repetitive and non repetitive) 100 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3000
mJ
V
DSS
= 100V
R
DSon
= 4.5mΩ typ @ Tj = 25°C
I
D
= 278A @ Tc = 25°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features
• Power MOS V
®
FREDFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile

Full - Bridge
MOSFET Power Module