APTM10DDAM19T3
A
P
T
M
10D
D
A
M
19T
3– R
e
v 0 M
a
y, 2005
APT website – http://www.advancedpower.com 1 - 6







1413
Q1 Q2
23 8
22 7
CR 1 CR 2
3029 32
426
327
31
1615
R1


16
15
182023 22
13
11 12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4

All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …

Absolute maximum ratings


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 100 V
T
c
= 25°C 70
I
D
Continuous Drain Current
T
c
= 80°C 50
I
DM
Pulsed Drain current 300
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 20
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 208 W
I
AR
Avalanche current (repetitive and non repetitive) 75 A
E
AR
Repetitive Avalanche Energy 30
E
AS
Single Pulse Avalanche Energy 1500
mJ
V
DSS
= 100V
R
DSon
= 19mΩ typ @ Tj = 25°C
I
D
= 70A @ Tc = 25°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction

Features
• Power MOS V
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single
boost of twice the current capability
Dual Boost chopper
MOSFET Power Module