APTM10SKM02
A
P
T
M
10S
K
M
02– R
e
v 0 M
a
y, 2005
APT website – http://www.advancedpower.com 1 - 6







Q1
S1
OUT
0/VBUS
CR2
VBUS
G1


OUT
G1
S1
0/VBUSVBUS


Absolute maximum ratings




These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 100 V
T
c
= 25°C 495
I
D
Continuous Drain Current
T
c
= 80°C 370
I
DM
Pulsed Drain current 1900
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 2.5
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 1250 W
I
AR
Avalanche current (repetitive and non repetitive) 100 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3000
mJ
V
DSS
= 100V
R
DSon
= 2.25mΩ typ @ Tj = 25°C
I
D
= 495A @ Tc = 25°C
Application

• AC and DC motor control
• Switched Mode Power Supplies

Features

• Power MOS V
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration

Benefits

• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Buck chopper
MOSFET Power Module