APTM10HM09FT3G
A
P
T
M
10H
M
09F
T
3
G
– R
e
v 1 A
p
r
i
l
, 2006
APT website – http://www.advancedpower.com 1 – 6







11
Q4
1413
23
Q2
10
8
7
3
4
22
29 31
R1
15 16
32
26
19
18
Q1 Q3
27
30

16
15
182023 22
13
11 12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4

All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …

Absolute maximum ratings

* Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature
greater than 30°C for the connectors.

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 100 V
T
c
= 25°C 139
I
D
Continuous Drain Current
T
c
= 80°C 100 *
I
DM
Pulsed Drain current 430
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 9.5
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 390 W
I
AR
Avalanche current (repetitive and non repetitive) 100 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3000
mJ
V
DSS
= 100V
R
DSon
= 9mΩ typ @ Tj = 25°C
I
D
= 139A @ Tc = 25°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features
• Power MOS V
®
FREDFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
• RoHS compliant
Full - Bridge
MOSFET Power Module