APTM10DUM02
A
P
T
M
10D
U
M
02–
R
e
v 0 M
a
y, 2005
APT website – http://www.advancedpower.com 1 - 6








D2
S
Q1
D1
S2
G2
Q2
G1
S1



D2
G1
S1
S
G2
D1
S2



Absolute maximum ratings





These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 100 V
T
c
= 25°C 495
I
D
Continuous Drain Current
T
c
= 80°C 370
I
DM
Pulsed Drain current 1900
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 2.5
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 1250 W
I
AR
Avalanche current (repetitive and non repetitive) 100 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3000
mJ
V
DSS
= 100V
R
DSon
= 2.25mΩ typ @ Tj = 25°C
I
D
= 495A @ Tc = 25°C
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies

Features
• Power MOS V
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile

Dual Common Source
MOSFET Power Module