APTM100UM65D-AlN
A
P
T
M
100U
M
65D
-
A
l
N
–
R
e
v 0 J
u
l
y, 2004
APT website – http://www.advancedpower.com 1 – 6














DS
G
SK




Absolute maximum ratings



These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 1000 V
T
c
= 25°C 145
I
D
Continuous Drain Current
T
c
= 80°C 110
I
DM
Pulsed Drain current 580
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 65
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 3250 W
I
AR
Avalanche current (repetitive and non repetitive) 30 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 3200
mJ
V
DSS
= 1000V
R
DSon
= 65mΩ max @ Tj = 25°C
I
D
= 145A @ Tc = 25°C
Application

• Zero Current Switching resonant mode

Features
• Power MOS 7
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance

Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile

Single switch
with Series diode
MOSFET Power Module