APTM100U13S
A
P
T
M
100U
13S
– R
e
v 2 J
u
l
y, 2005
APT website – http://www.advancedpower.com 1 – 5








D
Q1
G
S
CR1SK









Absolute maximum ratings




These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 1000 V
T
c
= 25°C 65
I
D
Continuous Drain Current
T
c
= 80°C 48
I
DM
Pulsed Drain current 260
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 145
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 1250 W
I
AR
Avalanche current (repetitive and non repetitive) 17 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 2500
mJ
V
DSS
= 1000V
R
DSon
= 130mΩ typ @ Tj = 25°C
I
D
= 65A @ Tc = 25°C
Application

• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies


Features

• Power MOS V
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance


Benefits

• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance

Single switch
Series & parallel diodes
MOSFET Power Module