APTM100H45SCT
A
P
T
M
100H
45S
C
T
– R
e
v 1 J
une
, 2004
APT website – http://www.advancedpower.com 1 – 7








OUT1 OUT2
G1
S1
CR2A
Q1
CR1A
CR3BCR1B
G2
S2
NTC1
CR2B
Q2
CR4B
0/VBUS
CR4A
CR3A
G4
G3
S3
S4
Q4
NTC2
Q3
VBUS





OUT1
OUT2
NTC1
NTC2
G3
S3
VBUS
G1
S1
G4
G2
S2
0/VBUS
S4

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 1000 V
T
c
= 25°C 18
I
D
Continuous Drain Current
T
c
= 80°C 14
I
DM
Pulsed Drain current 72
A
V
GS
Gate - Source Voltage ±30 V
R
DSon
Drain - Source ON Resistance 450
mΩ
P
D
Maximum Power Dissipation T
c
= 25°C 357 W
I
AR
Avalanche current (repetitive and non repetitive) 18 A
E
AR
Repetitive Avalanche Energy 50
E
AS
Single Pulse Avalanche Energy 2500
mJ
V
DSS
= 1000V
R
DSon
= 450mΩ max @ Tj = 25°C
I
D
= 18A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies

Features
• Power MOS 7
®
MOSFETs
- Low R
DSon

- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated

• Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF

• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
Full bridge
Series & SiC parallel diodes
MOSFET Power Module