APTGT75DH120T
A
P
T
G
T
7
5
D
H
120
T
– R
e
v 0 M
a
y, 2005

APT website – http://www.advancedpower.com
1 - 5










Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
C
= 25°C 110
I
C
Continuous Collector Current
T
C
= 80°C 75
I
CM
Pulsed Collector Current T
C
= 25°C 175
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 357 W
RBSOA Reverse Bias Safe Operating Area T
j
= 125°C 150A @ 1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
VBUS
Q4
OUT2OUT1
VBUS SENSE
CR3
0/VBUS
G4
E4
NTC2
Q1
CR2
0/VBUS SENSE
NTC1
G1
E1




NTC2
OUT1
OUT2
VBUS
VBUS
SENSE
E1
NTC1
E4
G4
0/VBUS
0/VBUS
SENSE
G1

V
CES
= 1200V
I
C
= 75A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives

Features
• Fast Trench + Field Stop IGBT
®
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Internal thermistor for temperature monitoring

Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Asymmetrical - Bridge
Fast Trench + Field Stop IGBT
®

Power Module