APTGT400DU120
A
P
T
G
T
400
D
U
120 –
R
e
v 0 M
a
y, 2005

APT website – http://www.advancedpower.com
1 - 5










Absolute maximum ratings


* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature
greater than 100°C for the connectors.

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

Q2
E
Q1
C1 C2
E2
G2
E1
G1







C2C1 E
E1
G1
G2
E2

Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1200 V
T
C
= 25°C 560 *
I
C
Continuous Collector Current
T
C
= 80°C 400
I
CM
Pulsed Collector Current T
C
= 25°C 800
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 1785 W
RBSOA Reverse Bias Safe Operating Area T
j
= 125°C 800A @ 1100V
V
CES
= 1200V
I
C
= 400A @ Tc = 80°C
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies

Features
• Fast Trench + Field Stop IGBT
®
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration

Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Dual common source
Fast Trench + Field Stop IGBT
®

Power Module