APTGT30H170T3
A
P
T
G
T
3
0
H
170T
3 – R
e
v 0 S
e
pt
e
m
be
r
,
2004

APT website – http://www.advancedpower.com
1 - 5









Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 1700 V
T
C
= 25°C 45
I
C
Continuous Collector Current
T
C
= 80°C 30
I
CM
Pulsed Collector Current T
C
= 25°C 70
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 210 W
RBSOA Reverse Bias Safe Operation Area T
j
= 125°C 120A@1600V


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Q3
11
10
Q1
CR1
722
13 14
CR3
3
3029 32
18
19
23 8
15
31
R1
16
4
CR4CR2
Q2 Q4
26
27


16
15
182023 22
13
11 12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4

All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
V
CES
= 1700V
I
C
= 30A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features
• Trench + Field Stop IGBT
®
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring

Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a phase
leg of twice the current capability

Full - Bridge
Trench IGBT
®
Power Module