APTGT200H60
A
P
T
G
T
200
H
60 – R
e
v 0 M
a
y, 2005

APT website – http://www.advancedpower.com
1 - 5









Absolute maximum ratings


These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

G4
0/VBUS
E3
Q3
G3
OUT2
VBUS
E1
Q1
G1
E4
Q4
OUT1
E2
Q2
G2




E2
G2
G4
E4
E3
G1
E1
0/VBUSVBUS
OUT2
OUT1
G3

Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600 V
T
C
= 25°C 290
I
C
Continuous Collector Current
T
C
= 80°C 200
I
CM
Pulsed Collector Current T
C
= 25°C 400
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation T
C
= 25°C 625 W
RBSOA Reverse Bias Safe Operating Area T
j
= 150°C 400A @ 550V
V
CES
= 600V
I
C
= 200A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features
• Trench + Field Stop IGBT
®
Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration

Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Full - Bridge
Trench + Field Stop IGBT
®

Power Module